List of I.P for sale
Intellectual property
| Domestic or overseas | Domestic | Form of the I.P | Patent |
|---|---|---|---|
| Patent no. | US 12/342426 | Registration no. | 8058676 |
| Name of the invention | Spin transistor using double carrier supply layer structure | ||
| Name of the invention(English) | |||
| I.P sector | Machine | ||
| Image file[C] | |||
| Attached file | |||
| Patent evaluation rating | Patent evaluation score | ||
| Technology valuation | |||
Commercialization information
| I.P Abstract & Summary | A spin transistor includes a semiconductor substrate including a channel layer having a 2-dimensional electron gas structure and upper and lower cladding layers disposed respectively in upper and lower sides of the channel layer; ferromagnetic source and drain electrodes formed on the semiconductor substrate and disposed spaced apart from each other; a gate electrode disposed between the source electrode and the drain electrode and having a gate voltage applied thereto in order to control the spin of electrons passed through the channel layer; a first carrier supply layer disposed between the lower cladding layer and the channel layer to supply carriers to the channel layer; and a second carrier supply layer disposed between the upper cladding layer and the channel layer to supply carriers to the channel layer. |
|---|---|
| Trade type of the I.P | Rights transfer ( Overall ) |
| 10,000,000KRW ~ 10,000,000KRW | |
| I.P stage | Idea stage |
#Machine, #Spin, #Transistor, #electron, #Gas, #Carrier, #Supply, #Semiconductor
